Zaffar Zaidi

WORK HISTORY

EDUCATION

ABOUT ZAFFAR ZAIDI

I am presently serving as a Design Engineer at Diodes Incorporated in Greenock, United Kingdom, where my focus lies in the advancement of silicon-based MOSFET devices.Previously, in my role as a senior Process Development Engineer at INEX Micro Technology, I spearheaded the development of gallium nitride (GaN) based electronic devices, contributing significantly to the creation of a groundbreaking Polarization Superjunction (PSJ) GaN HEMT process flow. My involvement extended to device integration and enhancing the technology readiness level of PSJ GaN HEMT for manufacturability, achieved through the establishment of a supply chain in the UK for this purpose.In a prior position at X-FAB Global Services GmbH, I operated as a Senior Process Development Engineer, concentrating on CMOS 4T/5T image sensors. My responsibilities encompassed TCAD device simulation, specifically for global storage pixel design, process flow development, device design and architecture, and data analysis, with specialized training from Synopsys.During my research tenure at the University of Sheffield, I engaged in the fabrication, design/layout, development, and characterization of semiconductor devices. My role extended to the creation and fabrication of innovative electronic devices, actively supporting technological advancements within a collaborative network in the UK. I consistently provided valuable feedback to collaborators, including those from Cambridge University, by constructing novel test structures to assess materials quality. Additionally, I designed and fabricated advanced integrated circuits, presenting technical results at consortium review meetings and fostering collaboration with researchers from partner universities to exchange technological insights and ideas.