Yogendra Yadav

About Yogendra Yadav

I received my Ph.D. degree from the Department of Electrical Engineering, IIT Bombay in January 2021 having worked on GaN-based HEMTs for RF applications. My research focuses on Fabrication characterization, TCAD simulation, and analysis of AlGaN/GaN-based high electron mobility transistors (AlGaN/GaN HEMTs) with improved ohmic contacts.Novel Ohmic metal stack, Ohmic contact.Device and Process Technologies Developed:Process IntegrationRF GaN HEMT, Monolithic Microwave Integrated Circuits10-year experience in cleanroom, devices process, and DC and RF charaterzation.Extensive test and characterization:DC(B1500), temperature-dependent I-V, RF measurements using Agilent Parametric Net-work Analyzer, S-parameter Extraction, Load-Pull, PAE measurements, and Hall MeasurementSimulation and Modeling:TCAD (Silvaco and Synopsys). Hands-on experience with a wide variety of semiconductor processing techniques including:e-beam evaporation (Metallization-Oerlikon), Plasma etching by ICPRIE, annealing by RTA, sputtering, wet etch, photolithography(DSA), E-Beam Lithography(Raith 150 Two)

Experience

1. Senior Staff Engineer (Process Integration Modelling)

   Applied Materials

   Jun 2022 — Present · Bengaluru, IN

   Computer Aided Engineering Center of Excellence (CAE-COE)

Education

• CCS (Chaudhary Charan Singh)University

  M.Sc

  2002 — 2004

• Indian Institute of Technology, Kharagpur

  M.Tech

  2007 — 2009

• Indian Institute of Technology, Bombay

  Doctor of Philosophy - PhD

  2013 — 2020