Yanjun

About Yanjun

47 US patents and a number of international patents covering human-computer interactions, machine learning, non-volatile memory, RFID, high-k dielectric dielectrics and metal gate - including some of the earliest and most highly cited (>100 times) patents on high-k dielectrics and replacement gate (gate last) technology. Patent on doped Zr/HfO2 (#6,297,539) has been cited over 250 times.Engineering management in IC technology development, product and test engineering, and engineering lab supporting product development in RFID ICs, systems, and solutions.Over 70 scientific and technical publications in the above areas as well in high-Tc superconductors, C60, silicon surface, quasi-crystals, x-ray absorption and emission, supercritical fluids, and others.Co-author,\"Non-logic Devices in Logic Processes\", Springer, scholar & hl=en

Experience

1. Science Advisor

   Population

   Oct 2020 — Present

Education

• University of Science and Technology of China

  BS, Earth and Space Science

  1978 — 1982

• University of Washington

  Ph.D, Physics

  1984 — 1987

• University of Washington

  MS, Physics

  1982 — 1984

Skills

• Product Development
• Physics
• Embedded Systems
• Product Engineering
• Ic
• Patents
• Engineering Management
• Semiconductors
• Rf
• Semiconductor Industry
• Silicon
• Research and Development (R&D)
• Wireless
• Rfid+
• Product Management
• Application-Specific Integrated Circuits (Asic)
• Electronics
• R&D
• Cmos
• Integrated Circuits (Ic)
• Asic
• Soc
• System on a Chip (Soc)