Tawhid R.
Engineering Manager, SiC Epitaxy
- Role
- Engineering Manager, Epi Process at Sk Siltron Css
- Location
- Midland, MI, US
- LinkedIn followers
- 500 followers
About Tawhid R.
CVD Reactor: Designed, built and optimized a hotwall CVD reactor consisting of high vacuum chamber, pumps, induction heating system, multi gas delivery system, controllers, etc.• Epitaxy (thin film) growth: Developed a new CVD epitaxial growth process (SiC) using novel SiF4 precursor demonstrating high crystal quality by eliminating Si droplet/particle formation. • Etching: Developed a novel dry etching process for surface preparation (CVD); First reported a Si-precursor SiF4 (in H2) to be a superior etchant enhancing SiC etching by faster Si removal rate. • Epi defect reduction: Reduced / eliminated SiC epitaxial basal plane dislocations (BPD) by passivating defect sites on the substrate by KOH-wet-etching and subsequent epi growth by SiF4.• CVD gas chemistry: Conducted detailed comparative study of CVD epitaxial growth using various Si gas precursors (SiH4, SiH2Cl2 and SiF4) including Si gas phase nucleation and particle generation.• Particle suppression in CVD: Invented a method to study parasitic deposition on the reactor parts / related particles and optimize growth process by particle reduction.
Experience
Engineering Manager, Epi Process
Feb 2024 — Present · Auburn, MI, US
Education
University of Dhaka
Master of Science (MS), Applied Physics and Electronics
University of South Carolina
Doctor of Philosophy (PhD), Electrical and Electronics Engineering
2008 — 2013
University of Dhaka
Bachelor of Science (BS), Applied Physics and Electronics
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