Sumit Anand

Process Integration Engineer Senior Project Associate @Centre For Nano Science And Engineering Cense , Iisc

Bengaluru, IN

1] Thin Film Deposition: In ongoing and prior projects, used E-Beam Evaporators (Leybold & Tecport) for Ti/Al/Ni/Au ohmic and gate metallization; Sputter Coater (Tecport) for uniform metal/dielectric films; ICPCVD and Oxford PECVD for low-stress SiN passivation; Beneq ALD for conformal high-k gate dielectrics and interface engineering.[2] Lithography & Mask Writing: Used across past and current work—High-resolution e-beam lithography (Raith e-Line, Raith Pioneer) for sub-100 nm T-gate patterning; Optical lithography (EVG 620, MJB4) for frontside/backside alignment and large-area patterning; Heidelberg uPG501, DWL 66+, and uMLA mask writers for custom mask design and rapid prototyping.[3] Epitaxial Growth: Active, hands-on use of Aixtron MOCVD reactor for growth of high-quality GaN buffer layers, AlN nucleation layers, polarization-graded buffers, and AlGaN barrier layers with controlled Al composition for optimized 2DEG formation in GaN HEMTs.[4] Etching & Surface Treatment: In continuous use of— RIE-Cl (Oxford & Plasma Therm) for metal etching, RIE-F (Oxford) for dielectric patterning, RIE-X (Plasma Therm) for multi-material etching; Plasma Asher (Diener) for resist stripping and oxygen plasma descum.[5] Wafer Cleaning & Preparation: Used routinely, Chemical wet benches for solvent, base, and acid cleans (RCA, Piranha, HF dip) to ensure particle-free, oxide-free surfaces prior to critical process steps.[6] Surface & Morphology Analysis: Consistent use of AFM (Park, Bruker, Oxford) for surface roughness and morphology; SEM (Zeiss) for imaging device structures and etch profiles.[7] Optical & Thickness Measurements: Repeated use of Ellipsometry for thin-film thickness and refractive index; KSA Ultra Scan for wafer bow and stress; Dektak for step height measurement.[8] Electrical Characterization: Experienced in using the Four-Point Probe for sheet resistance; DC Probe Station for I–V tests; RF Probe Station for S-parameter and small-signal performance.

Bangor University

Master of Engineering, Electrical and Electronics Engineering