Saba Rajabi
Sr Staff R & d Device Engineer @Vishay Intertechnology, Inc.
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WORK HISTORY
Sr Staff R & d Device Engineer @Vishay Intertechnology, Inc.
US
Lead the power GaN based device design team for low-medium power device applications. Design and development of SiC and GaN power devices’ core, edge termination and ESD circuites for automotive applications. Design and development of PCM devices and test instructions. Cooperation with integration, test and reliability teams and foundries for new product definition and development. Perform device and process TCAD simulations and device layout as part of new technology development. Characterization of the electrical performances of the devices, data analysis and comparison with competitors and industry test standards (JEDEC and and providing technical support. Incorporation of design for manufacturability and determination of manufacturing tolerances. Responsible for DFEMA development for GaN based devices.
EDUCATION
Arizona State University
Master of Science - MS
University of California, Davis
Doctor of Philosophy - PhD
SKILLS
ABOUT SABA RAJABI
A seasoned professional with over a decade of experience working in R&D and semiconductor…
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