Nithin S.

Sr Staff Engineer Mgr @Qualcomm

Cambridge, GB
MOBILE NUMBERS
+91 *********19

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WORK HISTORY

Aug 2017 — Present

Sr Staff Engineer Mgr @Qualcomm

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Cambridge, GB

Server CPU Implementation:AUDIO SS / MIXED SIGNAL IP DEV : 14nm tech node,/ 6nm /4nm tech node SS LEAD: Owning (hands on) RTL2GDSII / Roadmap Planning AUDIO SOC: 22nm tech node, SOC 18.8 mm2 Die Area SOC: Owned (hands on) Power Optimization meeting Target Metric AUDIO SOC: 14nm tech node, SOC 18.8 mm2 Die Area PD Lead: overall execution, SOC FP/PNR, planning & technical guidance WIFI SOC: 14nm tech node, SOC 22.5 mm2 Die Area PD Lead: overall execution, SOC FP/PNR, planning & technical guidance WIFI SOC (V2): 28nm technology node, SOC 36.8 mm2 Die Area PD Lead: Improved QoR, Top CTS, Guided LP / Timing / Functional ECO AUDIO SOC: 28nm tech node, SOC 47.5 mm2 Die Area SOC: Owned TOP Partition / FT Planning | FUNC ECO | CLP Clean-up HM: Lead 2M+ instances, 130+ macro DSP CoreHM Lead: Display / Wi-Fi Sub system Lead, 5nm / 14nm tech node 3 HMs within DDR Sub System: 7nm tech node

EDUCATION

2005 — 2006

Manipal Academy of Higher Education

MS VLSI, VLSI CAD

1990 — 2000

IJHS

ICSE / ISC, Basic Science

2000 — 2004

Cochin University of Science and Technology

BTech, Electronics & Communication

ABOUT NITHIN S.

Experienced ASIC Physical Design Engineer

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Nithin S. — Sr Staff Engineer Mgr at Qualcomm in Cambridge, GB | Unifers