Nirmal Ramaswamy
Corporate Vice President - DRAM Technology Development Group
- Role
- Corporate Vice President - Dram Technology Development Group at Micron Technology
- Location
- Boise, ID, US
- LinkedIn followers
- 500 followers
About Nirmal Ramaswamy
I lead DRAM, Emerging Memory and CMOS Technology Development at Micron with teams in US, Japan, Taiwan and Italy.Specialities: Emerging Memory, DRAM, ferroelectrics, NAND, ReRAM, CBRAM, TANOS, Charge Trap Flash, Crosspoint Memory, High K, Metal gates for NAND and DRAM applications. 350+ published patents in the above fields.
Experience
Corporate Vice President - Dram Technology Development Group
Apr 2025 — Present
Education
Arizona State University
PhD, Material Science and Engineering
2004 — 2008
Indian Institute of Technology, Madras
Bachelor of Technology (B.Tech.), Metallurgical Engineering
1996 — 2000
Arizona State University
M.S, Materials Science and Engineering
2000 — 2002
Stanford University Graduate School of Business
Stanford Executive Program, Business Administration and Management, General
2018 — 2018
Skills
- Materials Science
- Failure Analysis
- Semiconductor Industry
- Jmp
- Design of Experiments
- Silicon
- Dram
- Cvd
- Cmos
- Integrated Circuits (Ic)
- Thin Films
- Semiconductors
- R
- Simulations
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