Golam Morshed
Post-silicon Debug (Fault Isolation) Engineer @Intel | PhD in EE (Nanomagnetic phenomena & devices) @UVA | Former Olsen Fellow @UVA
- Role
- Yield Development Engineer at Intel
- Location
- Hillsboro, OR, US
- LinkedIn followers
- 500 followers
About Golam Morshed
5+ years of experience working in cutting-edge research in solid-state physics, with a strong background in semiconductor devices and physics. Successfully led and completed multiple research projects in highly collaborative and cross-functional teams. I am a PhD candidate at the University of Virginia, working at the Virginia Nano Computing (VINO) group. My current research is in the broad area of Spintronics and Nanomagnetic devices. In particular, I work on computational modeling and simulation of energy barrier engineering in nanomagnetic devices that leverage traditional nanomagnets (e.g, magnetic tunnel junctions) and topological invariants (e.g, skyrmions, topological insulators) for low-power, high-density, and high-speed memory and computing.I am a US Permanent Resident, fully authorized to work, and do not require any visa sponsorship.
Experience
Yield Development Engineer
Oct 2024 — Present · Hillsboro, OR, US
Education
University of Virginia
Doctor of Philosophy - PhD, Electrical Engineering
2019 — 2024
Bangladesh University of Engineering and Technology
Bachelor of Science - BS, Electrical and Electronics Engineering
2010 — 2015
Clarkson University
Master of Engineering - ME, Electrical Engineering
2017 — 2018
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