Kesavan Venkatachalam

WORK HISTORY

EDUCATION

ABOUT KESAVAN VENKATACHALAM

Specialize in enhancing multicrystalline silicon (mc-Silicon) ingot growth using Directional Solidification (DS) furnaces with six years of experience. Achieved the successful growth of eight mc-Silicon ingots, showcasing proficiency in optimizing processes for quality outcomes. I have utilized CGSim numerical simulation software to enhance the quality of mc-Silicon ingots For the past six years. Expertise in modelling and simulation of heat and mass transfer problems. Hands-on experience for Directional Solidification (DS) Furnace, Minority Carrier Lifetime, Measurements (µPCD), Wet Chemical Etching, FTIR spectrophotometer, X-ray diffractometer (XRD), Optical Microscope, UVVis-NIR spectrophotometer, brick and wafers making, Four Probe. I have authored and published 14 research articles in international journals and have been honored with two awards for the best paper presentation at international conferences. Specializing in mathematical modeling for spherical particle growth in titanium alloy materials. Expertise includes investigating coarsening behavior in alpha+beta titanium alloys during heat treatment. Research Interest: Modelling and Simulation of Heat and Mass Transfer problems, Silicon ingot growth, silicon wafer characterizations, Embedded System Development, Capacitance Sensor, Nano tweezer and NEMS.#silicon #mc-Si #crystal_growth #CGSim #Microstructure_Evolution