Jovan Uddin
Ph.D. Candidate in Applied Physics at MTU |Process Development Engineer Intern@Texas Instruments |Nano materials| Semiconductor Device Physics | Data Analysis | Machine Learning
- Role
- Process Development Engineer at Texas Instruments
- Location
- Houghton, MI, US
- LinkedIn followers
- 500 followers
About Jovan Uddin
Passionate about the intersection of materials science and solid-state device…
Experience
Process Development Engineer
May 2025 — Present · Lehi, UT, US
Deposited epitaxial SiGe thin films via CVD on ESQ, SEH, and patterned wafers; performed temperature skew studies and characterized films using XRD, SE, and AFM. Analyzed data using JMP and applied Statistical Process Control (SPC) to identify process limits, proposed optimum SEH wafer thickness for line monitoring, achieved $50K savings per epi tool, and compared SiGe processes for Pad 1 vs. Pad 4.*Did Design of Experiments (DOE) and wrote recipes for Nitride Hard Mask and Ultra Low K thin films; deposited films using CVD. Proposed Run-to-Run (R2R) setup for both processes to reduce process variation.*Performed initial assessment of a Machine Learning model using Python for STI HARP process prediction
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