Jovan Uddin

Ph.D. Candidate in Applied Physics at MTU |Process Development Engineer Intern@Texas Instruments |Nano materials| Semiconductor Device Physics | Data Analysis | Machine Learning

Role
Process Development Engineer at Texas Instruments
Location
Houghton, MI, US
LinkedIn followers
500 followers

About Jovan Uddin

Passionate about the intersection of materials science and solid-state device…

Experience

  1. Process Development Engineer

    Texas Instruments

    May 2025 — Present · Lehi, UT, US

    Deposited epitaxial SiGe thin films via CVD on ESQ, SEH, and patterned wafers; performed temperature skew studies and characterized films using XRD, SE, and AFM. Analyzed data using JMP and applied Statistical Process Control (SPC) to identify process limits, proposed optimum SEH wafer thickness for line monitoring, achieved $50K savings per epi tool, and compared SiGe processes for Pad 1 vs. Pad 4.*Did Design of Experiments (DOE) and wrote recipes for Nitride Hard Mask and Ultra Low K thin films; deposited films using CVD. Proposed Run-to-Run (R2R) setup for both processes to reduce process variation.*Performed initial assessment of a Machine Learning model using Python for STI HARP process prediction

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Jovan Uddin — Process Development Engineer at Texas Instruments in Houghton, MI, US | Unifers