Feiyuan Yang
Power Device Engineer @Cambridge GaN Devices Ltd
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WORK HISTORY
Power Device Engineer @Cambridge GaN Devices Ltd
Cambridge, GB
Device characterization: from wafer to package; from static to dynamic; from small to large device.• Test automation and data analysis using Python scripts.• Project lead for multiple tasks.
EDUCATION
Shanghai Jiao Tong University
Bachelor of Engineering - BE
University of Bristol
Doctor of Philosophy - PhD
ABOUT FEIYUAN YANG
7 years experience working in wide bandgap semiconductor devices (e.g, GaN device).• Familiar with the state-of-the-art characterization methodologies for reliability analysis of semiconductor devices.• Skilled at data extraction, analysis, and modelling (Python); TCAD simulation tools for semiconductor devices (e.g, Ansys, Silvaco Atlas/Victory device, LTspice).• In-depth knowledge of semiconductor physics and technology.• Professional in mask layout design (including PCM design) and process flow design.
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