Falikou Doumbia
Process Integration Process Development Engineer (Si Sic Gaas) @Cactus Materials, Inc.
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WORK HISTORY
Process Integration Process Development Engineer (Si Sic Gaas) @Cactus Materials, Inc.
Tempe, AZ, US
Lead process integration and development for high-voltage SiC (1.2 kV and 3.3 kV) and high-power 1200 V silicon device technologies, supporting both device performance and manufacturability targets.Own cross-module integration strategy across front-end and BEOL, ensuring compatibility between epitaxy, implantation, high-temperature anneals, lithography, etch, metallization, and downstream processes.Bring hands-on BEOL integration experience, including sputtering, insulator deposition, reactive ion etching (RIE), and copper plating, with emphasis on stress control, adhesion, and reliability in high-voltage device flows.Define and manage thermal budgets, thin-film stress limits, and wafer bow, enabling stable lithography and edge-termination alignment in thick-epi, high-temperature SiC processes.Support new product development (NPD) from initial device concept and process definition through pilot builds and transition to full-scale manufacturing, identifying integration risks early and driving convergence to robust, scalable process flows.Apply DOE-driven optimization and advanced metrology (SEM, AFM, film stress, wafer curvature) to correlate materials behavior and process conditions with electrical performance, yield, and long-term reliability.Interface with backend and assembly activities, including bonding, to ensure front-end and BEOL process decisions remain compatible with packaging, reliability, and cost constraints.
EDUCATION
Arizona State University
Bachelors of Science in Engineering , Electrical and Electronics Engineering
Mesa Community College
Associate Applied Science, Electronics Engineering Technology , Electrical and Electronics Engineering
Ira A. Fulton Schools of Engineering at Arizona State University
MS Manufacturing Engineering
ABOUT FALIKOU DOUMBIA
I am a Process Integration and Process Development Engineer with over eight years of experience in the semiconductor industry, spanning high-volume manufacturing, process integration, and advanced device development across Si, SiC, and GaAs technologies.My work focuses on developing and integrating high-voltage and high-power devices, including 1.2 kV and 3.3 kV SiC technologies and 1200 V silicon. I specialize in defining integration strategies that balance device performance with manufacturability, reliability, and yield, with particular emphasis on thermal budgets, thin-film stress, wafer bow, and downstream compatibility.I began my career at Intel as a Manufacturing Technician and progressed into a Process Engineer role, gaining a floor-up understanding of fab operations, SPC, excursion response, and manufacturing discipline. This background strongly informs my engineering judgment and allows me to design processes that scale beyond development into production.I currently work at a startup environment where I own cross-module integration decisions, apply DOE-driven optimization, and correlate electrical behavior with materials and process physics using advanced metrology such as SEM, AFM, and wafer curvature analysis.I am particularly interested in roles that require device-aware process integration, early risk identification, and technical leadership in advanced or high-voltage semiconductor technologies.
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