Benjamin Moser

About Benjamin Moser

Developed new MFG Processes and made Improvements for increased Process Control, drove Defect Reductions, implemented new Process Transfers, led Design of Experiments, Led/Facilitated Cross Functional Teams, drove Cost Reduction, used Model Based Problem Solving, Six Sigma, Analytical Skills (JMP), Process upgrades and Fab startups.Recognized in cross functional team leadership of semiconductor process engineers tasked with process module level defect reduction and yield improvement. Awarded with Intel Module award for Results Orientation, Quality and Discipline for modeling and identify cause and leading fix yield loss due to CoSi residue defect mode. Skilled in use of Data Mining & Analysis using various methods: 8D, 5W, Is/IsNot, Isogawa fishbone, Gemba Walk, Pareto Principle, Seven Step Problem Solving Methods. and data driven statistical based decision-making.CMOS FEOL process development and sustaining experienced in: •Implant, Furnace and RTP process development and sustaining. •* Implant applications, equipment and subsystems development. •* Flash annealing process applications (HiK PDA, Ultra-shallow junction, NiSi formation). •* Batch Furnace thin/thick gate oxide formation.GaAs MESFET in-line parametric testing and test development.*MRI medical imaging equipment calibrating, installing and trouble-shooting.*Missile weapons sub-systems electronics technician-expertise, radar, digital and electro-mechanical systems.

Experience

1. Sr Process Engineer

   Micron Technology

   May 2024 — Present · Boise, ID, US

Education

• Rutgers University

  BA, Physics

  1996

• U.S. NAVY TRAINING

  FTM2, Adv. Electronics:: Missile Systems, Radar, Computers ...

  1981 — 1987