Arnab Biswas
Principal Engineer @Infineon Technologies
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WORK HISTORY
Principal Engineer @Infineon Technologies
Munich, DE
Expert for Compact Modeling of Silicon Power Devices
EDUCATION
EPFL
PhD, Microsytems and Microelectronics
Sikkim Manipal Institute of Technology
Bachelor of Technology (B.Tech.), Electronics & Communication Engineering
Vellore Institute of Technology
Master of Technology (M.Tech.), Nanotechnology
SKILLS
ABOUT ARNAB BISWAS
More than 12 years of experience in Semiconductor Device Physics, Compact Modeling: Silicon Power Devices (IGBT, Diodes), Tunnel FET, 1T-DRAMCurrently focused on compact model development and virtual prototyping for Silicon power devices like IGBT and power diodes. Managing projects leading to development of improved model state of the art. My PhD research interest was focused on development of physics-based compact analytical models for beyond CMOS devices: Tunnel FETs. Following are key highlights of my competences:• Expert in semiconductor physics, SPICE & Verilog-A compact model development of advanced electronic devices.• Deep knowledge of Synopsys Sentaurus TCAD simulation tool. Experience with Silvaco Atlas, Cadence Virtuoso & SaberRD.• Extensive use of Python & Matlab scripting. Experience in VHDL-AMS, IC-CAP, LabView & C/C++.• Extensive experience in DC/AC electrical characterization tools for FET devices.• Experience in microfabrication working in class 100 clean room environment at CMi, EPFL.• Experience in developing and writing of technical documents. Delivery of milestones and deliverable documents.
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