Mohammed
Device Integration Engineer at Intel |Memory Technologies |Semiconductor Devices| Reliability Physics| Manufacturing
- Role
- Nvm Device Integration & Yield Engineer at Intel
- Location
- San Jose, CA, US
- LinkedIn followers
- 500 followers
About Mohammed
Technologist working for Intel for 6 years. In my current role, I am leading research and development in order to develop industry-leading NAND Flash memory technology. The scope includes hands-on characterization, modeling of the observed NAND memory device/array characteristics, and engineering solutions to achieve the highest level of NAND memory component performance, quality, and reliability. Earlier, I worked as a process engineer in LTD where I was responsible for research, development, and optimization of novel process technologies for BEOL and ramp to high volume manufacturing in the thin film dielectrics area for Intel\'s latest and next-generation processors. In addition, I am leading continuous efforts to qualify new platforms needed for ramping fab capacity and technology-driven process change. Before Intel, I gained diverse experience in academia working on nano-scale ballistic thermal transport and self-heating of nanoelectronics. Through my Ph.D, I published 20+ journal papers on the areas of nanoscale thermal transport and self-heating of nanocomposites at (Nano Letters, APL, PRB, JMR, and Nano Research) among which one article has been featured as a Cover article at Nano Letters. my work has been cited 600+ times. I have collaborated with teams from different research areas all over the world; leveraging my ability to work in multidisciplinary teams. Regarding my mentoring experience, I have developed a training plan for junior engineers and technicians to satisfy their certification requirements for LTD. Earlier during grad school, I mentored an undergraduate researcher through the Purdue summer undergraduate research program (SURF). His work got published as an educational tool on nanoHUB.
Experience
Nvm Device Integration & Yield Engineer
Jan 2021 — Present
Device Engineer at Intel Corporation leading research and development in order to develop industry-leading NAND Flash memory technology. The scope includes hands-on characterization, modeling of the observed NAND memory device/array characteristics, and engineering solutions to achieve the highest level of NAND memory component performance, quality, and reliability.
Education
Purdue University
Doctor of Philosophy (PhD), Nanotechnology, 4.0/4.0
2012 — 2017
Cairo University
Bachelor of Applied Science (BASc), Electrical, Electronics and Communications Engineering, 90.75/100
2003 — 2008
Cairo University
Master of Science (M.Sc.), Engineering Physics, 3.90/4.0
2008 — 2012
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