Ahmad Khayat Jafari

About Ahmad Khayat Jafari

Professional & skilled semiconductor engineer / scientist with expertise in Semiconductor Devices, Metrology & Inspection, Fabrication Processes (Front- & Back-End), Characterization Techniques, Design of Experiment (DoE), Statistical Process Control (SPC), & tool operation (Lam Research, Hitachi, & TEL). Experienced in working effectively across big tech companies KLA & Intel in clean rooms & collaborated with fab engineers & techs to develop the operation & manufacturing procedures (CIP).GAA (Gate-All-Around) transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling. Early GAA devices will use vertically-stacked nanosheets. They are constructed of separate horizontal sheets, surrounded by gate materials on all sides. This provides improved channel control relative to finFETs. Unlike finFETs, where higher current requires multiple side-by-side fins, the current-carrying capacity of GAA transistors is increased by stacking a few nanosheets vertically, with gate material wrapped around the channels.

Experience

1. Ltd Module & Integration Yield Engineer

   Intel

   Oct 2023 — Present · Hillsboro, OR, US

Education

• University of South Florida

  Master of Science in Applied Physics, Digital Holography

  2012 — 2015

• Isfahan University of Technology

  Bachelor of Applied Science in Applied Physics, Condensed Matter and Materials Physics

  2001 — 2005

• Shahid Beheshti University

  Master of Science in Photonics, Laser Mass Spectrometry

  2005 — 2008

• Texas Tech University

  Master of Science In Electrical Engineering, Photoluminescence Spectroscopy of Wide Bandgap Semiconductors (Erbium-doped GaN)

  2015 — 2016

Skills

• C++
• Afm
• Experimentation
• Matlab
• Statistics
• Optics
• Photonics
• Characterization
• Mathematica
• Spectroscopy
• Mathematical Modeling
• Simulations
• Science
• Fortran
• Research
• Fortran 95
• Physics