Adil Meersha
Semiconductor Device Scientist @Paragraf
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WORK HISTORY
Semiconductor Device Scientist @Paragraf
Cambridge, GB
EDUCATION
National Institute of Technology Calicut
Bachelor of Technology (BTech)
Indian Institute of Science (IISc)
Doctor of Philosophy - PhD
SKILLS
ABOUT ADIL MEERSHA
During his Ph.D. Adil developed different technology modules for enabling graphene based terahertztechnology. One of the key contributions was the development of a reliable contact engineering method formetal-graphene interfaces and thereby overcoming one of the biggest bottlenecks in graphene terahertzelectronics [IEDM 2016]. This has led to record low metal-graphene contact resistances and correspondinghigh performing transistors. Adil has developed several process modules bridging the gap betweengraphene growth and RF transistor circuits which includes an ultra-clean graphene transfer, residue-freegraphene patterning, the realization of record low metal graphene contact resistances, low leakage and high KALD dielectric growth for graphene like surfaces and a high yield graphene transistor fabrication processflow. Graphene was also stacked between hexagonal Boron Nitride(h-BN) sheets to improve the transistorperformance. The additional challenges imposed by this stacking, namely the development of multilayer(hBN-Graphene-hBN) transfer process and (ii) selective removal of h-BN to contact graphene, withouthurting graphene channel/contact quality, were also addressed in this work
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